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The silicon carbide (SiC) material has a large width of the forbidden band (3 times of Si), high thermal conductivity (3.3 times of Si or 10 times of GaAs), high electron saturation migration rate (2.5 times of Si), and high breakdown electric field (10 times that of Si or 5 times that of GaAs) and other properties.

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High Temperature Superconductor Bulk Materials Fundamentals – Processing – Properties Control – Appliion Aspects 311 pages 2006 Hardcover ISBN: 978-3-527-40383-7 Engineering Superconductivity 672 pages 2001 Hardcover ISBN: 978-0-471-41116-1 Edited by Raghu Bhattacharya and M. Parans Paranthaman High Temperature Superconductors

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